Microwave Engineering Mcq Set 3 | Engineering - Online Exam Test Papers | Engineering - MCQs[multiple choice questions and answers ] | Engineering - Mock Test Papers | Engineering - Practice Papers

Question:

 If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is:

1. 3.2 V

2.6.4 V

3.2.4 V

4.6.5 V

Question:

 If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is:

1.12 GHz

2.25 GHz

3.30 GHz

4.24 GHz

Question:

 If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6 watt, with the load resistance being equal to 2.5 Ω, the efficiency of the diode is:

1.10.1 %

2.10.21 %

3.12 %

4.15.2 %

Question:

 In order to achieve high current density, a compromise in _______is made in a TRAPATT diode.

1.Gain

2.Size

3.Operating frequency

4.No compromise is made on any of the parameter

Question:

 The frequency of oscillation in Gunn diode is given by:

1. vdom/ Leff

2.Leff/ Vdom

3.Leff/ WVdom

4.None of the mentioned

Question:

 The resonant frequency of an IMPATT diode is given by:

1.Vd/2l

2.Vd/l

3.Vd/2πl

4.Vdd/4πl

Question:

. When either a voltage or current is applied to the terminals of bulk solid state compound GaAs, a differential ______ is developed in that bulk device.

1.negative resistance

2.positive resistance

3.negative voltage

4.None of the mentioned

Question:

A major disadvantage of TRAPATT diode is:

1.Fabrication is costly

2.Low operational bandwidth

3.Low gain

4.High noise figure

Question:

As the area of rectifying contact goes on increasing, the forward resistance of the Schottky diode:

1.Increases

2.Decreases

3.Remains unchanged

4. None of the mentioned

Question:

BJTs are bipolar junction transistors. The name bipolar is given because:

1.they are made of n type and p type semiconductor

2. they have holes as charge carriers

3. they have electrons as charge carriers

4.none of the mentioned

Question:

Classical p-n junction diode cannot be used for high frequency applications because of:

1.High bias voltage

2.High junction capacitance

3.Frequency sensitive

4.High forward biased current

Question:

GaAs is used in fabricating Gunn diode. Gunn diode is:

1.bulk device

2.sliced device

3.made of different type of semiconductor layers

4.none of the mentioned

Question:

If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the drift time of the carrier is:

1.0-11 seconds

2. 2×10-11 seconds

3.2.5×10-11 seconds

4.None of the mentioned

Question:

Schottky barrier diode is a sophisticated version of the point contact ______________

1.Germanium diode

2.Silicon crystal diode

3.GaAs diode

4.None of the mentioned

Question:

The free electron concentration in N-type GaAs is controlled by:
a)

1. effective doping

2.bias voltage

3.drive current

4.None of the mentioned

Question:

The mode of operation in which the Gunn diode is not stable is:

d)

1.Gunn oscillation mode

2. limited space charge accumulation mode

3.stable amplification mode

4. bias circuit oscillation mode

Question:

The most important functional unit of a spectrum analyzer is:

1. Mixer

2.IF amplifier

3. Sensitive receiver

4.None of the mentioned

Question:

The number of modes of operation for n type GaAs is:

1.two

2.three

3.four

4.five

Question:

The number of semiconductor layers in a TRAPATT diode is:

1.Two

2.Three

3.Four

4.One

Question:

The number of semiconductor layers in IMPATT diode is:

1.two

2.three

3.four

4. none of the mentioned

Question:

To prevent an IMPATT diode from burning, a constant bias source is used to maintain _______ at safe limit.

1. average current

2.average voltage

3.average bias voltage

4. average resistance

Question:

When a reverse bias voltage exceeding the breakdown voltage is applied to an IMPATT diode, it results in:

1.avalanche multiplication

2.break down of depletion region

3.high reverse saturation current

4.None of the mentioned

Question:

When the applied electric field exceeds the threshold value, electrons absorb more energy from the field and become:

1. hot electrons

2.cold electrons

3.emission electrons

4.None of the mentioned

Question:

_________ gives a frequency domain representation of a signal, displaying the average power density versus frequency.

1.CRO

2.Oscilloscope

3.Spectrum analyzer

4.Network analyzer

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Engineering/Microwave Engineering Mcq Set 3 Sample Test,Sample questions

Question:
If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is:

Question:
If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is:

Question:
If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6 watt, with the load resistance being equal to 2.5 Ω, the efficiency of the diode is:

Question:
In order to achieve high current density, a compromise in _______is made in a TRAPATT diode.

Question:
The frequency of oscillation in Gunn diode is given by:

Question:
The resonant frequency of an IMPATT diode is given by:

Question:
. When either a voltage or current is applied to the terminals of bulk solid state compound GaAs, a differential ______ is developed in that bulk device.

Question:
A major disadvantage of TRAPATT diode is:

Question:
As the area of rectifying contact goes on increasing, the forward resistance of the Schottky diode:

Question:
BJTs are bipolar junction transistors. The name bipolar is given because:

Question:
Classical p-n junction diode cannot be used for high frequency applications because of:

Question:
GaAs is used in fabricating Gunn diode. Gunn diode is:

Question:
If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the drift time of the carrier is:

Question:
Schottky barrier diode is a sophisticated version of the point contact ______________

Question:
The free electron concentration in N-type GaAs is controlled by: a)

Question:
The mode of operation in which the Gunn diode is not stable is: d)

Question:
The most important functional unit of a spectrum analyzer is:

Question:
The number of modes of operation for n type GaAs is:

Question:
The number of semiconductor layers in a TRAPATT diode is:

Question:
The number of semiconductor layers in IMPATT diode is:

Question:
To prevent an IMPATT diode from burning, a constant bias source is used to maintain _______ at safe limit.

Question:
When a reverse bias voltage exceeding the breakdown voltage is applied to an IMPATT diode, it results in:

Question:
When the applied electric field exceeds the threshold value, electrons absorb more energy from the field and become:

Question:
_________ gives a frequency domain representation of a signal, displaying the average power density versus frequency.

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R4R Team

Engineering/Microwave Engineering Mcq Set 3 Sample Test,Sample questions

Question: If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is:

Question: If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is:

Question: If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6 watt, with the load resistance being equal to 2.5 Ω, the efficiency of the diode is:

Question: In order to achieve high current density, a compromise in _______is made in a TRAPATT diode.

Question: The frequency of oscillation in Gunn diode is given by:

Question: The resonant frequency of an IMPATT diode is given by:

Question: . When either a voltage or current is applied to the terminals of bulk solid state compound GaAs, a differential ______ is developed in that bulk device.

Question: A major disadvantage of TRAPATT diode is:

Question: As the area of rectifying contact goes on increasing, the forward resistance of the Schottky diode:

Question: BJTs are bipolar junction transistors. The name bipolar is given because:

Question: Classical p-n junction diode cannot be used for high frequency applications because of:

Question: GaAs is used in fabricating Gunn diode. Gunn diode is:

Question: If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the drift time of the carrier is:

Question: Schottky barrier diode is a sophisticated version of the point contact ______________

Question: The free electron concentration in N-type GaAs is controlled by: a)

Question: The mode of operation in which the Gunn diode is not stable is: d)

Question: The most important functional unit of a spectrum analyzer is:

Question: The number of modes of operation for n type GaAs is:

Question: The number of semiconductor layers in a TRAPATT diode is:

Question: The number of semiconductor layers in IMPATT diode is:

Question: To prevent an IMPATT diode from burning, a constant bias source is used to maintain _______ at safe limit.

Question: When a reverse bias voltage exceeding the breakdown voltage is applied to an IMPATT diode, it results in:

Question: When the applied electric field exceeds the threshold value, electrons absorb more energy from the field and become:

Question: _________ gives a frequency domain representation of a signal, displaying the average power density versus frequency.

More MCQS

Search

R4R Team

Question:
If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is:

Question:
If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is:

Question:
If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6 watt, with the load resistance being equal to 2.5 Ω, the efficiency of the diode is:

Question:
In order to achieve high current density, a compromise in _______is made in a TRAPATT diode.

Question:
The frequency of oscillation in Gunn diode is given by:

Question:
The resonant frequency of an IMPATT diode is given by:

Question:
. When either a voltage or current is applied to the terminals of bulk solid state compound GaAs, a differential ______ is developed in that bulk device.

Question:
A major disadvantage of TRAPATT diode is:

Question:
As the area of rectifying contact goes on increasing, the forward resistance of the Schottky diode:

Question:
BJTs are bipolar junction transistors. The name bipolar is given because:

Question:
Classical p-n junction diode cannot be used for high frequency applications because of:

Question:
GaAs is used in fabricating Gunn diode. Gunn diode is:

Question:
If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the drift time of the carrier is:

Question:
Schottky barrier diode is a sophisticated version of the point contact ______________

Question:
The free electron concentration in N-type GaAs is controlled by: a)

Question:
The mode of operation in which the Gunn diode is not stable is: d)

Question:
The most important functional unit of a spectrum analyzer is:

Question:
The number of modes of operation for n type GaAs is:

Question:
The number of semiconductor layers in a TRAPATT diode is:

Question:
The number of semiconductor layers in IMPATT diode is:

Question:
To prevent an IMPATT diode from burning, a constant bias source is used to maintain _______ at safe limit.

Question:
When a reverse bias voltage exceeding the breakdown voltage is applied to an IMPATT diode, it results in:

Question:
When the applied electric field exceeds the threshold value, electrons absorb more energy from the field and become:

Question:
_________ gives a frequency domain representation of a signal, displaying the average power density versus frequency.